Defects production and annealing in self‐implanted Si
نویسندگان
چکیده
منابع مشابه
Defects production and annealing in self-implanted Si
230-keV 28Si ions were implantated into Si( 100) at room temperature with doses from 1014 to 101*/cm2. The samples were analyzed by x-ray double crystal diffractometry and 2-MeV 4He ion channeling spectrometry. The implanted layer has a parallel lattice spacing equal to that of the unimplanted substrate. The perpendicular lattice spacing is larger than that of the unimplanted substrate and is p...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1991
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.349668